Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.5.580/fulltext
Reference16 articles.
1. Effect of static uniaxial stress on the Raman spectrum of silicon
2. STRESS‐DEPENDENT RAMAN FREQUENCY AND LINEWIDTH IN α‐QUARTZ
3. Raman scattering and phase transitions in stressed SrTiO3
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