Effects of solution processable CuI thin films with Al<sub>2</sub>O<sub>3</sub>-based sandwiched architecture for high-performance p-type transistor applications-Reference-Cited by-同舟云学术

Effects of solution processable CuI thin films with Al₂O₃-based sandwiched architecture for high-performance p-type transistor applications

Published:2024 Issue:18 Volume:12 Page:6457-6468
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Hyun-Ah¹,Kim Tae In²^ORCID,Kwon Hyuck-In¹^ORCID,Park Ick-Joon³^ORCID

Affiliation:

1. Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Korea

2. Department of Electrical Engineering, Inha University, Incheon, 22212, Korea

3. Department of Electrical and Electronic Engineering, Joongbu University, Goyang, 10279, Korea

Abstract

The enhancement in electrical performance of the solution-processed p-type CuI TFTs is achieved by constructing the aluminum oxide-based sandwiched architecture, which can improve the crystallinity and anion vacancy states in the CuI channel layer.

Funder

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00203B

Reference54 articles.

1. An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition

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3. Metal oxides for optoelectronic applications

4. Fabrication of high-performance solution processed thin film transistors by introducing a buffer layer

5. The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors

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