The effect of pressure on the thermodynamic properties of hydrogenic impurity in the GaAs semiconductor quantum well
Author:
Affiliation:
1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of China
2. School of Sports, Ludong University, Yantai, People’s Republic of China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province, China
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/14786435.2024.2348803
Reference35 articles.
1. Binding energy of the 2p0-like level of a hydrogenic donor in GaAs-Ga1−xAlxAs quantum-well structures
2. Hydrogenic impurity states in quantum dots and quantum wires
3. Impurity effect on thermal properties of tuned quantum dot/ring systems
4. Electric field effects on the binding energy of hydrogen impurities in quantum dots with parabolic confinements
5. Stress effects on shallow-donor impurity states in symmetricalGaAs/AlxGa1−xAsdouble quantum wells
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