Binding energy of the 2p0-like level of a hydrogenic donor in GaAs-Ga1−xAlxAs quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.4006/fulltext
Reference8 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
3. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
4. Binding energies of acceptors in GaAs-AlxGa1−xAsquantum wells
5. Hydrogenic-impurity ground state inGaAs−Ga1−xAlxAsmultiple—quantum-well structures
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3. The effect of dielectric constant on binding energy and impurity self-polarization in a GaAs–Ga1−x Al x As spherical quantum dot;Indian Journal of Physics;2016-09-09
4. Electric Field Effects on Resonant and Localized Impurity States in a Square Quantum Well;Journal of Computational and Theoretical Nanoscience;2012-03-01
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