Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s13369-023-08388-2.pdf
Reference29 articles.
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2. Bhat, A.M.; Poonia, R.; Varghese, A.; Shafi, N.; Periasamy, C.: AlGaN/GaN high electron mobility transistor for various sensing applications: a review. Micro Nanostruct. 8, 207528 (2023)
3. Radhamma, E.; Vemana Chary, D.; Krishnamurthy, A.; Venkatarami Reddy, D.; Sreenivasa Rao, D.; Gowthami, Y.; Balaji, B.: Performance analysis of high-K dielectric heterojunction high electron mobility transistor for RF applications. Int. J. Eng. 36, 1652–1658 (2023)
4. Li, H.; Li, D.; Chen, H.; Yue, X.; Fan, K.; Dong, L.; Wang, G.: Application of silicon nanowire field effect transistor (SiNW-FET) biosensor with high sensitivity. Sensors. 23, 6808 (2023)
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