Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Author:

Li Huiping1,Li Dujuan1,Chen Huiyi1,Yue Xiaojie2,Fan Kai3,Dong Linxi1,Wang Gaofeng1ORCID

Affiliation:

1. Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China

2. The Children’s Hospital of Zhejiang University School of Medicine, Hangzhou 310052, China

3. School of Automation, Hangzhou Dianzi University, Hangzhou 310018, China

Abstract

As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.

Funder

NSFC Key Grant

National Key R&D Program Grant

Zhejiang Provincial Key Research and Development Project

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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