1 Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High-k ZrO2 Gate Dielectric
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2018/03
类型：期刊论文 为本人加分：1758.066158
2 Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
来源：IEEE J SEL TOP QUANT( P 1077-260X E 1558-4542 ) 发表时间: 2009/07
类型：期刊论文 为本人加分：1111.474878
3 Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2017/03
类型：期刊论文 为本人加分：1090.190232
4 Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2016/05
类型：期刊论文 为本人加分：1039.897404
5 Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD
来源：IEEE ELECTR DEVICE L( P 0741-3106 E ) 发表时间: 2008/06
类型：期刊论文 为本人加分：958.066158
6 Active matrix monolithic micro-LED full-color micro-display
来源：J SOC INF DISPLAY( P 1071-0922 E 1938-3657 ) 发表时间: 2021/01
类型：期刊论文 为本人加分：902.842133
7 Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers
来源：IEEE PHOTONIC TECH L( P 1041-1135 E 1941-0174 ) 发表时间: 2019/06
类型：期刊论文 为本人加分：891.708831
8 Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"
来源：PHOTONICS RES( P 2327-9125 E ) 发表时间: 2020/05
类型：期刊论文 为本人加分：789.606008
9 Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
来源：APPL PHYS LETT( P 0003-6951 E 1077-3118 ) 发表时间: 2004/03
类型：期刊论文 为本人加分：762.780868
10 Growth of ultra-high mobility In0.52Al0.48As/InxGa1-xAs (x ≥ 53%) quantum wells on Si substrates us..
来源：APPL PHYS EXPRESS( P 1882-0778 E 1882-0786 ) 发表时间: 2014/04
类型：期刊论文 为本人加分：712.322795