1 Analog circuit optimization system based on hybrid evolutionary algorithms
来源：INTEGRATION( P 0167-9260 E 1872-7522 ) 发表时间: 2009/02
类型：期刊论文 为本人加分：6964.453581
2 A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
来源：SOLID STATE ELECTRON( P 0038-1101 E 1879-2405 ) 发表时间: 2008/01
类型：期刊论文 为本人加分：5065.318482
3 A Deep Insight Into the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Unclamped Inductive Sw..
来源：IEEE T POWER ELECTR( P 0885-8993 E 1941-0107 ) 发表时间: 2018/06
类型：期刊论文 为本人加分：3753.659502
4 A theoretical model for metal-graphene contact resistance using a DFT-NEGF method
来源：PHYS CHEM CHEM PHYS( P 1463-9076 E 1463-9084 ) 发表时间: 2013/01
类型：期刊论文 为本人加分：3373.517061
5 N-type B-S co-doping and S doping in diamond from first principles
来源：CARBON( P 0008-6223 E 1873-3891 ) 发表时间: 2018/04
类型：期刊论文 为本人加分：3294.201056
6 A 24-28-GHz Four-Element Phased-Array Transceiver Front End With 21.1%/16.6% Transmitter Peak/OP1dB ..
来源：IEEE T MICROW THEORY( P 0018-9480 E 1557-9670 ) 发表时间: 2021/06
类型：期刊论文 为本人加分：3273.327779
7 4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2017/11
类型：期刊论文 为本人加分：3252.290425
8 2-D analytical model for current-voltage characteristics and transconductance of AlGaN/GaN MODFETs
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2008/01
类型：期刊论文 为本人加分：3126.976595
9 An analytical model for current-voltage characteristics of AlGaN/GaN HEMTs in presence of self-heati..
来源：SOLID STATE ELECTRON( P 0038-1101 E 1879-2405 ) 发表时间: 2010/01
类型：期刊论文 为本人加分：3096.302598
10 Wideband Inductorless Low-Power LNAs with G(m) Enhancement and Noise-Cancellation
来源：IEEE T CIRCUITS-I( P 1549-8328 E 1558-0806 ) 发表时间: 2018/01
类型：期刊论文 为本人加分：2881.713370