1. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Current status of micro-display technology based on micro-light-emitting diodes
2. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes
3. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Thermally Resilient InGaN/GaN MicroLEDs Maintaining Narrowband Emission to 250 °C
4. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Evaluation of etching damage of unintentionally doped GaN by C-V characteristics for charge balance ..
5. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Enhanced emission efficiency and directionality in InGaN/GaN microLEDs laterally enclosed by distrib..
6. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 On-State Current Increasing Structure of Source-Connected Polarization Superjunction Transistor
7. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 All-GaN-Based Monolithic MIS-HEMT Integrated Micro-LED Pixels for Active-Matrix Displays
8. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm
9. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Light-Stimulated Artificial Synapses with Accelerating Photopic Adaption Based on III-Nitride Hetero..
10. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Recent advances in micro-pixel light emitting diode technology
11. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Impact of graphene state on the orientation of III-nitride
12. Ferenc Krausz 德国 Max Planck Institute Quantum Opt 2022沃尔夫物理奖;2023诺贝尔物理学奖;2026美国科学院院士 Ultra-CEP-stable single-cycle pulses at 2.2 μm
13. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs
14. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micr..
15. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on..
16. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-E..
17. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
18. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Micro-Light Emitting Diode: From Chips to Applications
19. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods sy..
20. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods