1. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm
2. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Metasurface Light-Emitting Diodes with Directional and Focused Emission
3. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments
4. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on..
5. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
6. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 The effect of dry etching condition on the performance of blue micro light-emitting diodes with redu..
7. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Uniting a III-Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip
8. Isamu,Akasaki 日本 Meijo University 2014诺贝尔物理学奖 Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple ..
9. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel ..
10. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layer..
11. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Limiting factors of GaN-on-GaN LED
12. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-E..
13. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown ..
14. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Micro-Light Emitting Diode: From Chips to Applications
15. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-em..
16. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and t..
17. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 High external quantum efficiency III-nitride micro-light-emitting diodes
18. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer exter..
19. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices
20. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode