Affiliation:
1. State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China.
2. School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China.
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
Funder
Natural Science Research Start-up Foudation of Recruiting Talents of Nanjing University of Posts and Telecommunication
the Project of State Key Laboratory of Organic Electronics and Information Displays of Nanjing University of Posts and Telecommunication
Publisher
American Association for the Advancement of Science (AAAS)
Cited by
5 articles.
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