Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films

Author:

Spaggiari Giulia12ORCID,Fornari Roberto12ORCID,Mazzolini Piero12ORCID,Mezzadri Francesco23,Parisini Antonella1,Bosi Matteo2,Seravalli Luca2ORCID,Pattini Francesco2,Pavesi Maura1,Baraldi Andrea1,Rampino Stefano2,Sacchi Anna1,Bersani Danilo1

Affiliation:

1. Department of Mathematical, Physical and Computer Sciences, University of Parma, Parma, Italy

2. Institute of Materials for Electronics and Magnetism (IMEM), National Research Council (CNR), Parma, Italy

3. Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Parma, Italy

Abstract

Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (Ga2O3) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in Ga2O3 thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for Ga2O3 characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal–organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on Ga2O3 polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for Ga2O3 thin film characterization, especially concerning phase detection and crystalline quality.

Publisher

SAGE Publications

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