Affiliation:
1. Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, Tamil Nadu INDIA
2. Department of Electronics and Communication Engineering, Sri Ramakrishna Engineering College, Coimbatore, Tamil Nadu INDIA
Abstract
3D Vertical Nanotube Field Effect Transistors (NTFETs) with various channel materials are analysed for 5nm gate length (LG) in this research work. The DC and RF studies are performed on NTFET devices with Silicon, Gallium Nitride (GaN), and SiliconGermanium (SiGe) as channel materials. The impact of variation of channel length, channel thickness, and temperature analysis on these devices have been studied. The ION/IOFF ratio of Si-NTFET, GaN-NTFET and SiGe-NTFET are found to be 2.7×108^ , 1.08×10^9 , 1.69×10^8 respectively. GaN channel NTFET exhibits the lowest subthreshold swing (SS) of 33.1mV/dec with the highest cut-off frequency of 190 GHz. From the analysis, it is found that NTFET with GaN channel device outperforms the other two devices.
Publisher
World Scientific and Engineering Academy and Society (WSEAS)
Subject
Electrical and Electronic Engineering
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