0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits-Reference-Cited by-同舟云学术

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0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits

Published:1992 Issue: Volume: Page:
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Container-title:International Technical Digest on Electron Devices Meeting
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Author:

Grider ,Ruden ,Nohava ,Mactaggart ,Stronczer ,Tran

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/1032/7499/00307372.pdf?arnumber=307372

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. p-type Channel Field-Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010

2. Materials and Technologies for III-V MOSFETs;Fundamentals of III-V Semiconductor MOSFETs;2010

3. Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs;Applied Surface Science;1997-06

4. 0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency;IEEE Electron Device Letters;1997-02

5. Complementary Hfet Technology for Low-Power Mixed-Mode Applications;MRS Proceedings;1996

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