High performance amorphous oxide thin film transistors with self-aligned top-gate structure-Reference-Cited by-同舟云学术

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High performance amorphous oxide thin film transistors with self-aligned top-gate structure

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Park Jae Chul,Kim Sang Wook,Kim Sun Il,Huaxiang Yin ,Hur Ji Hyun,Jeon Sang Hun,Park Sung Ho,Song I Hun,Park Young Soo,Chung U In,Ryu Myung Kwan,Lee Sangwon,Kim Sungchul,Yongwoo Jeon ,Kim Dong Myong,Kim Dae Hwan,Kee-Won Kwon ,Kim Chang Jung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424391.pdf?arnumber=5424391

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transistor engineering based on 2D materials in the post-silicon era;Nature Reviews Electrical Engineering;2024-04-30

2. Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering;IEEE Electron Device Letters;2024-04

3. Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress;IEEE Transactions on Electron Devices;2022-08

4. Machine Learning–Assisted Thin-Film Transistor Characterization: A Case Study of Amorphous Indium Gallium Zinc Oxide (IGZO) Thin-Film Transistors;ECS Journal of Solid State Science and Technology;2022-05-01

5. Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution;RSC Advances;2022

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