A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss-Reference-Cited by-同舟云学术

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A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Feng Hao,Yang Wentao,Onozawa Yuichi,Yoshimura Takashi,Tamenori Akira,Sin Johnny K.O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520813.pdf?arnumber=7520813

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