High Yield Precision Transfer and Assembly of GaN µLEDs Using Laser Assisted Micro Transfer Printing-Reference-Cited by-同舟云学术

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High Yield Precision Transfer and Assembly of GaN µLEDs Using Laser Assisted Micro Transfer Printing

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
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Author:

Ezhilarasu G.,Hanna A.,Paranjpe Ajit,Iyer S.S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8795274/8811008/08811375.pdf?arnumber=8811375

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress of Micro-LED Display Technology;Crystals;2023-06-23

2. Large Wafer GaN on Silicon Reconstitution with Gold-to-Gold Thermocompression Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

3. Laser‐Based Micro/Nano‐Processing Techniques for Microscale LEDs and Full‐Color Displays;Advanced Materials Technologies;2022-11-04

4. P‐5.7: Selective Laser Lift‐off of GaN Micro‐LED from a Sapphire Substrate Using 266‐nm Solid‐state Laser;SID Symposium Digest of Technical Papers;2022-10

5. Flexible Hybrid Electronics Using Fan‐Out Wafer‐Level Packaging;Embedded and Fan‐Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces;2021-12-03

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