Effect of Oxygen-Related Defects on Electrical Properties of Cd<sub>0.9</sub>Zn<sub>0.1</sub>Te Semiconductor-Reference-Cited by-同舟云学术

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Effect of Oxygen-Related Defects on Electrical Properties of Cd_0.9Zn_0.1Te Semiconductor

Published:2024-08 Issue:8 Volume:71 Page:1996-2002
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Yu Haiwen¹^ORCID,Liu Hongguang¹,Chen Jianquan¹^ORCID,Jia Ningbo²,Wang Miao²,Yang Mei²,Zhang Quanchao¹,Wang Tao¹^ORCID,Yang Fan²^ORCID,Jie Wanqi¹^ORCID

Affiliation:

1. State Key Laboratory of Solidification Processing and the MIIT Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, China

2. Imdetek Corporation Ltd., Xi’an, China

Funder

2022 Xi’an Major Technology Research and Development Cluster Project Titled “Industrialization Technology of Photon Counting X-Ray Imaging Detectors”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/23/10638189/10596306.pdf?arnumber=10596306

Reference26 articles.

1. Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

2. DC photoconductivity study of semi-insulating Cd1−xZnxTe crystals

3. Medical applications of CdTe and CdZnTe detectors

4. Recent advances in compound semiconductor radiation detectors

5. Tellurium antisites in CdZnTe

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