Modeling and Optimization Algorithm of Coupling Noise for SiC MOSFET Active Gate Driver Considering Common-Source Inductance-Reference-Cited by-同舟云学术

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Modeling and Optimization Algorithm of Coupling Noise for SiC MOSFET Active Gate Driver Considering Common-Source Inductance

Published:2024-11 Issue:11 Volume:39 Page:14271-14283
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Liu Hengyang¹^ORCID,Kong Wubin¹^ORCID,Long Gen²,Lou Hangchuan¹,Wu Xianglong¹,Li Dawei¹^ORCID,Liu Zirui¹^ORCID,Dong Minghai³,Zhao Zian³,Wen Yixue⁴

Affiliation:

1. State Key Laboratory of High Density Electrical Energy Conversion, Huazhong University of Science and Technology, Wuhan, China

2. Wuhan Maritime Communication Research Institute, Wuhan, China

3. Foshan Institute of Intelligent Equipment Technology, Foshan, China

4. Foshan Agent Servo Technology Company Ltd., Foshan, China

Funder

National Natural Science Foundation of China

Guangdong Province Basic and Applied Basic Research Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/63/10679334/10631707.pdf?arnumber=10631707

Reference32 articles.

1. Development of Advanced All-SiC Power Modules

2. A Survey of Wide Bandgap Power Semiconductor Devices

3. Dead-Time Compensation Based on Current Phase Estimation for High-Frequency Cascaded Transformer Multilevel Inverter

4. A Multilevel Gate Driver of SiC mosfets for Mitigating Coupling Noise in Bridge-Leg Converter

5. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

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