Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
Author:
Affiliation:
1. Kyushu Institute of Technology, Kitakyushu, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10130046/10106030.pdf?arnumber=10106030
Reference20 articles.
1. Experimental verification of a 3D scaling principle for low Vce(sat) IGBT;kakushima;Proc IEEE Int Electron Devices Meeting,0
2. IGBT scaling principle toward CMOS compatible wafer processes
3. Freewheeling diode reverse-recovery failure modes in IGBT applications
4. Design considerations for fast soft reverse recovery diodes;benda;Proc 5th Eur Conf Power Electron Appl,0
5. 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
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