A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs-Reference-Cited by-同舟云学术

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A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Mitard J.,Witters L.,Sasaki Y.,Arimura H.,Schulze A.,Loo R.,Ragnarsson L.-A.,Hikavyy A.,Cott D.,Chiarella T.,Kubicek S.,Mertens H.,Ritzenthaler R.,Vrancken C.,Favia P.,Bender H.,Horiguchi N.,Barla K.,Mocuta D.,Mocuta A.,Collaert N.,Thean A.V-Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573368.pdf?arnumber=7573368

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping;Journal of Materials Science: Materials in Electronics;2024-02

2. Optimization of SiGe interface properties with ozone oxidation and a stacked HfO₂/Al₂O₃ dielectric for a SiGe channel FinFET transistor;Semiconductor Science and Technology;2022-11-04

3. HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale;Ultramicroscopy;2020-12

4. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07

5. Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs;IEEE Transactions on Electron Devices;2020-07

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