GeSn channel nMOSFETs: Material potential and technological outlook-Reference-Cited by-同舟云学术

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GeSn channel nMOSFETs: Material potential and technological outlook

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 Symposium on VLSI Technology (VLSIT)
language:
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Author:

Gupta S.,Vincent B.,Lin D. H. C.,Gunji M.,Firrincieli A.,Gencarelli F.,Magyari-Kope B.,Yang B.,Douhard B.,Delmotte J.,Franquet A.,Caymax M.,Dekoster J.,Nishi Y.,Saraswat K.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242478.pdf?arnumber=6242478

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high rectification efficiency Si0.14Ge0.72Sn0.14-Ge0.82Sn0.18-Ge quantum structure n-MOSFET for 2.45G weak energy microwave wireless energy transmission;Chinese Physics B;2021-10-27

2. Modern methods of detecting single photons and their application in quantum communications;Quantum Electronics;2021-08-01

3. Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width;Nano Letters;2021-06-09

4. Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain;IEEE Electron Device Letters;2021-01

5. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07

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