Ferroelectricity in HfO<sub>2</sub> enables nonvolatile data storage in 28 nm HKMG-Reference-Cited by-同舟云学术

Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 Symposium on VLSI Technology (VLSIT)
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Author:

Muller J.¹,Yurchuk E.²,Schlosser T.³,Paul J.¹,Hoffmann R.¹,Muller S.²,Martin D.²,Slesazeck S.²,Polakowski P.¹,Sundqvist J.¹,Czernohorsky M.¹,Seidel K.¹,Kucher P.¹,Boschke R.³,Trentzsch M.³,Gebauer K.³,Schroder U.²,Mikolajick T.²

Affiliation:

1. Fraunhofer Center Nanoelectronic Technologies, Dresden, Germany

2. NaMLab GmbH, Dresden, Germany

3. GLOBALFOUNDRIES, Dresden, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242443.pdf?arnumber=6242443

Reference3 articles.

1. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

2. Downsizing of Ferroelectric-Gate Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells

3. Fabrication and characterization of sub-0.6-?m ferroelectric-gate field-effect Transistors;hai;Semicond Sci Technol,2010

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