Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs-Reference-Cited by-同舟云学术

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Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs

Published:2008-06 Issue:2 Volume:8 Page:289-296
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Fukai Y.K.,Sugitani S.,Enoki T.,Yamane Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/4539815/04437704.pdf?arnumber=4437704

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation Mechanisms for GaN and GaAs High Speed Transistors;Materials;2012-11-27

2. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

3. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03

4. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing;MRS Proceedings;2009

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