Funder
Council for Science Technology and Innovation CSTI Cross-ministerial Strategic Innovation Promotion Program SIP
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Reference29 articles.
1. Evaluating conduction loss of a parallel IGBT-MOSFET combination
2. High frequency power switch - improved performance by MOSFETs and IGBTs connected in parallel
3. The cross switch ‘XS’ silicon and silicon carbide hybrid concept;rahimo;Proc PCIM Europe,2015
4. Inversion layer injection devices from concept to applications in HVICs
5. Introduction of a hybrid MOSFET-IGBT power switching device utilising a novel Schottky biased minority carrier injector;westmoreland;Proc 14th Eur Conf Power Electron Appl (EPE),2011
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