Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer-Reference-Cited by-同舟云学术

Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer

Published:2022-11 Issue:11 Volume:69 Page:6260-6264
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Shumiao¹,Wang Juan¹^ORCID,Li Qi¹,Shao Guoqing¹^ORCID,Chen Genqiang¹,He Shi¹^ORCID,Wang Ruozheng¹,Wang Wei¹,Bu Renan¹,Wen Feng²,Wang Hong-Xing¹^ORCID

Affiliation:

1. Ministry Education Key Laboratory of Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China

2. Key Laboratory for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Key Research and Development Program of Shaanxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09912375.pdf?arnumber=9912375

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