Monolithically Integrated 940 nm Half VCSELs on Bulk Ge Substrates

Author:

Zhao Yunlong1ORCID,Wan Zeyu1,Guo Jia1,Yang Yun-Cheng2,Cheng Hao-Tien2ORCID,Chrostowski Lukas3ORCID,Lackner David4,Wu Chao-Hsin5ORCID,Xia Guangrui1ORCID

Affiliation:

1. Department of Materials Engineering, The University of British Columbia (UBC), Vancouver, Canada

2. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

3. Department of Electrical and Computer Engineering, The University of British Columbia (UBC), Vancouver, Canada

4. Fraunhofer Institute for Solar Energy Systems (ISE), Freiburg im Breisgau, Germany

5. Graduate Institute of Photonics and Optoelectronics, Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

Huawei Technologies Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Monolithically Integrated 940 nm VCSELs on Bulk Ge Substrates;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

2. Monolithically integrated 940 nm VCSELs on bulk Ge substrates;Optics Express;2024-02-08

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