Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network-Reference-Cited by-同舟云学术

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Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Huang P.,Xiang Y. C.,Zhao Y. D.,Liu C.,Gao B.,Wu H. Q.,Qian H.,Liu X. Y.,Kang J. F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614567.pdf?arnumber=8614567

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Physics-Informed Recurrent Neural Network for RRAM Modeling;Electronics;2023-07-02

2. Memristive Devices for Time Domain Compute-in-Memory;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2022-12

3. Reliability aspects of binary vector-matrix-multiplications using ReRAM devices;Neuromorphic Computing and Engineering;2022-06-22

4. Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

5. A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices;ACS Applied Materials & Interfaces;2021-11-22

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