A 130 nm InP HBT integrated circuit technology for THz electronics-Reference-Cited by-同舟云学术

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A 130 nm InP HBT integrated circuit technology for THz electronics

Published:2016-12 Issue: Volume: Page:29.2.1-29.2.4
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Urteaga M.,Hacker J.,Griffith Z.,Young A.,Pierson R.,Rowell P.,Seo M.,Rodwell M. J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838503.pdf?arnumber=7838503

Reference13 articles.

1. Influence of electron velocity overshoot on collector transit times of HBTs

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3. Sub-THz Integrated Circuits: Challenges and Opportunities;2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS);2024-08-11

4. High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate;Solid-State Electronics;2024-07

5. 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

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