Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC-Reference-Cited by-同舟云学术

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Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC

Published:2019-11 Issue: Volume: Page:
ISSN:
Container-title:2019 International Conference on Advanced Electrical Engineering (ICAEE)
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Author:

Bencherif Hichem,Dehimi Lakhdar,Pezzimenti Fortunato,Yousfi Abderrahim,De Martino Giuseppe,Della Corte Francesco G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8984253/9014605/09014701.pdf?arnumber=9014701

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An analytical model of P SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications;Micro and Nanostructures;2024-07

2. Numerical simulation of a highly efficient perovskite solar cell based on FeSi₂ photoactive layer;Nano Select;2024-05-05

3. Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials;Transactions on Electrical and Electronic Materials;2023-12-20

4. Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs;Electronics;2023-11-30

5. Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-11

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