An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation
Author:
Funder
Canada Research Chairs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/8937050/08765234.pdf?arnumber=8765234
Reference37 articles.
1. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models
2. Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
3. Circuit simulator models for the diode and IGBT with full temperature dependent features
4. An Improved Representation of FACTS Controller Semiconductor Losses in EMTP-Type Programs Using Accurate Loss-Power Injection Into Network Solution
5. Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control
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