Boron Doping: Unlocking Arsenic-Mimicking Performance in GeSe-Based OTS Selectors
Author:
Affiliation:
1. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
2. School of Integrated Circuits and Institute of Artificial Intelligence, Huazhong University of Science and Technology, Wuhan, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Hubei Provincial Natural Science Foundation of China
Hubei Key Laboratory of Advanced Memories and Hubei Engineering Research Center on Microelectronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10376160/10330599.pdf?arnumber=10330599
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