Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2

Author:

Guo XiaoluORCID,Zhong YaozongORCID,Zhou YuORCID,Su ShuaiORCID,Chen Xin,Yan Shumeng,Liu JianxunORCID,Sun Xiujian,Sun QianORCID,Yang Hui

Funder

Key-Area Research and Development Program of Guangdong Province

Natural Science Foundation of Jiangsu Province

Strategic Priority Research Program of the Chinese Academy of Sciences

Key Research Program of Frontier Sciences, CAS

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Science and Technology Program of Suzhou

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer;Semiconductor Science and Technology;2024-01-24

2. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04

3. Implementation of source extended multiple field plates and asymmetric doping on β-Ga2O3 MOSFET for high power applications;Micro and Nanostructures;2023-12

4. Quasi-Vertical GaN Schottky Barrier Diode on Sapphire Substrate With 109 High ION/IOFF and Excellent Forward Performance;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment;Applied Physics Letters;2023-11-20

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