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Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor

  • Published:2019-07 Issue:7 Volume:66 Page:1566-1573
  • ISSN:0018-9499
  • Container-title:IEEE Transactions on Nuclear Science
  • language:
  • Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Li Ruibin,Wang ChenhuiORCID,Chen Wei,He Chaohui,Wang Guizhen,Li Junlin,Bai Xiaoyan,Cong Peitian,Guo Xiaoqiang

Funder

National Natural Science Foundation of China

Foundation of State Key Laboratory of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous TID Susceptibility on Collector Bias for SOI High-Voltage Polysilicon Emitter Bipolar Transistors;IEEE Transactions on Electron Devices;2024-07

2. Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor;2024 IEEE Joint International Symposium on Electromagnetic Compatibility, Signal & Power Integrity: EMC Japan / Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Japan/APEMC Okinawa);2024-05-20

3. Transient dose rate effects in silicon–germanium heterojunction bipolar transistors;AIP Advances;2023-12-01

4. Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method;2023 International Applied Computational Electromagnetics Society Symposium (ACES-China);2023-08-15

5. Temperature-dependent analysis and correction in a neutron fluence real-time measuring circuit;Microelectronics Reliability;2023-08
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