Funder
Technology Investigation Agreement between the Air Force Research Laboratory
Boeing Network and Space Systems Internal Research and Development Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Reference18 articles.
1. A review of failure modes and mechanisms of GaN-based HEMTs
2. Physical degradation of GaN HEMT devices under high drain bias reliability testing
3. GaN HEMT reliability
4. Investigation of electrically active defects in GaN, AlGaN, and AlGaN/GaN high electron mobility transistors;arehart,2009
5. Quantitative spectroscopy of reliability limiting traps in operational gallium nitride based transistors using thermal and optical methods;sasikumar,2014
Cited by
2 articles.
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