AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$-Reference-Cited by-同舟云学术

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AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

Published:2013-01 Issue:1 Volume:34 Page:36-38
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bouzid-Driad S.,Maher H.,Defrance N.,Hoel V.,De Jaeger J.-C.,Renvoise M.,Frijlink P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6387615/06373691.pdf?arnumber=6373691

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3. First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding;physica status solidi (a);2024-05-15

4. Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors;Applied Physics Letters;2023-11-13

5. Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10

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