Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature

Author:

Wei Yuqi1ORCID,Hossain Md Maksudul1ORCID,Mantooth H. Alan2ORCID

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, RA, USA

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

Funder

NASA ULI: Development of the Cryogenic Hydrogen-Energy Electric Transport Aircraft Design Concept

University of Arkansas

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Reference30 articles.

1. Static and Dynamic Characterization of 650 V GaN E-HEMTs in Room and Cryogenic Environments

2. Characterization of wide bandgap semiconductor devices for cryogenically-cooled power electronics in aircraft applications;zhang;Proc AIAA/IEEE Elect Aircr Technol Symp,2018

3. Characterization of Inductor Magnetic Cores for Cryogenic Applications

4. Performance of high-frequency high-flux magnetic cores at cryogenic temperatures;gerber;Proc IEEE Intersoc Energy Convers Eng Conf,2002

5. Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature

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1. GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft;Superconductor Science and Technology;2023-07-31

2. Cryogenic Operation of Enhancement-Mode GaN HEMTs;2023 IEEE Workshop on Power Electronics for Aerospace Applications (PEASA);2023-07-18

3. Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers;IEEE Access;2023

4. A Cryogenic 3-kW GaN E-HEMT Synchronous Buck Converter;IEEE Transactions on Industrial Electronics;2023

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