Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes-Reference-Cited by-同舟云学术

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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Mateos J.¹,García-Sánchez S.¹,Daher M. Abou²,Lesecq M.²,Huo L.³,Lingaparthi R.³,Nethaji D.³,Radhakrishnan K.³,Íñiguez-de-La-Torre I.¹,Vasallo B. G.¹,Pérez S.¹,González T.¹

Affiliation:

1. Universidad de Salamanca,Applied Physics Department and USAL-NANOLAB,Salamanca,Spain

2. Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 – IEMN,Lille,France,F-59000

3. Nanyang Technological University,CINTRA, Temasek Laboratories,Singapore,637553

Funder

European Regional Development Fund

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512176.pdf?arnumber=10512176

Reference16 articles.

1. Sensing with Terahertz Radiation

2. The 2017 terahertz science and technology roadmap

3. Terahertz Emitter Using Resonant-Tunneling Diode and Applications

4. An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

5. Opening the terahertz window with integrated diode circuits

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