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Influence of Interface Exchange Coupling in Multilayered Spintronic Structures

  • Published:2024-05-20 Issue: Volume:15 Page:1579-1583
  • ISSN:
  • Container-title:2024 47th MIPRO ICT and Electronics Convention (MIPRO)
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Author:

Bendra M.1,de Orio R.L.2,Selberherr S.2,Goes W.3,Sverdlov V.1

Affiliation:

1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the

2. Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040

3. Silvaco Europe Ltd., Compass Point, St Ives,Cambridge,United Kingdom,PE27 5JL

Publisher

IEEE

Reference26 articles.

1. A crossbar array of magnetoresistive memory devices for in-memory computing

2. JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

3. High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications

4. dvancements in Nonvolatile Memory Technologies: The Role of STT-MRAM;Smith;Journal of Memory Systems,2023

5. Magnetic Tunnel Junctions: The Backbone of STT-MRAM;Johnson;Advanced Materials Technology,2022
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