Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications-Reference-Cited by-同舟云学术

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Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Strobel Carsten¹,Chavarin Carlos A.²,Wenger Christian³,Albert Matthias¹,Mikolajick Thomas¹

Affiliation:

1. Technische Universität Dresden, Institute of Semiconductors and Microsystems, Chair of Nanoelectronics,Dresden,Germany,01062

2. IHP - Leibniz-Institut fur innovative Mikroelektronik, Im Technologiepark 25,Frankfurt (Oder),Germany,15236

3. BTU Cottbus-Senftenberg,Cottbus,Germany,03046

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344102.pdf?arnumber=10344102

Reference12 articles.

1. Operation of Tunnel‐Emission Devices

2. A Graphene-Based Hot Electron Transistor

3. Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

4. Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

5. High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors;Nanomaterials;2024-07-02

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