Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack-Reference-Cited by-同舟云学术

Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

Published:2020-01 Issue:1 Volume:41 Page:179-182
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kwon Daewoong^ORCID,Cheema Suraj^ORCID,Lin Yen-Kai^ORCID,Liao Yu-Hung^ORCID,Chatterjee Korok^ORCID,Tan Ava J.^ORCID,Hu Chenming,Salahuddin Sayeef^ORCID

Funder

Berkeley Center for Negative Capacitance Transistors

U.S. Department of Energy

Resources of the Advanced Light Source, which is a DOE Office of Science User Facility

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/8944313/8891680-aam.pdf

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