Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs-Reference-Cited by-同舟云学术

Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs

Published:2024-01 Issue:1 Volume:71 Page:406-411
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Hongyue¹^ORCID,Liu Yuebo¹,Ge Lei²,Xu Mingsheng²,Shi Yijun¹^ORCID,Cai Zongqi¹^ORCID,Huang Kai¹,He ZhiYuan¹,Peng Yan¹,Wang Xiwei²,Wang Jinyan³^ORCID

Affiliation:

1. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou, China

2. Institute of Novel Semiconductor Materials and the State Key Laboratory of Crystal Materials, Shandong University, Jinan, China

3. School of Electronics Engineering and Computer Science, Peking University, Beijing, China

Funder

National Natural Science Foundation of China

Guangzhou Basic and Applied Basic Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10346600.pdf?arnumber=10346600

Reference36 articles.

1. RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

2. Polycrystalline Diamond MOSFET With MoO3 Gate Dielectric and Passivation Layer

3. Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

4. Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

5. Structural and electrical properties of H-terminated diamond field-effect transistor