Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
2. Graduate Institute of Electronics Engineering, and the Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
Funder
Ministry of Science and Technology of Taiwan, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10261402/10225632.pdf?arnumber=10225632
Reference32 articles.
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5. 40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transient Responses of The Majority and Minority Carriers During Rapid Reduction of The Inversion Charge in an MOS Structure;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22
2. Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation;IEEE Transactions on Electron Devices;2024-02
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