Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors-Reference-Cited by-同舟云学术

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Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Published:1996-11 Issue:11 Volume:17 Page:503-505
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hsiao-Yi Lin ,Chun-Yen Chang ,Tan Fu Lei ,Feng-Ming Liu ,Wen-Luh Yang ,Juing-Yi Cheng ,Hua-Chou Tseng ,Liang-Po Chen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/11693/00541762.pdf?arnumber=541762

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimum condition to fabricate 5–10 nm SiO2/Si structure using advanced nitric acid oxidation of Si method with Si source;Journal of Applied Physics;2012-12-15

2. Band alignment of SiO2/Si structure formed with nitric acid vapor below 500°C;Surface Science;2009-04

3. Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method;Applied Surface Science;2008-10

4. Nitric acid method for fabrication of gate oxides in TFT;Applied Surface Science;2008-04

5. Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method;Surface Science;2006-06

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