Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz-Reference-Cited by-同舟云学术

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Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz

Published:2023-12-01 Issue:23 Volume:41 Page:7092-7097
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Morgan Jesse S.¹^ORCID,Tabatabaei Fatemehsadat¹^ORCID,Fatema Tasneem¹^ORCID,Tang Chak Wah²^ORCID,Sun Keye¹^ORCID,Lau Kei May²^ORCID,Beling Andreas¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA

2. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/50/10339169/10195172-aam.pdf

Reference28 articles.

1. High-Speed Evanescently-Coupled Waveguide Type-II MUTC Photodiodes for Zero-Bias Operation

2. Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

3. Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes

4. InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 $ \mathbf {\mu }$m Wavelength

5. Characterization of Amplitude Noise to Phase Noise Conversion in Charge-Compensated Modified Unitravelling Carrier Photodiodes

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