Red InGaN Micro-LEDs on Silicon Substrates: Potential for Multicolor Display and Wavelength Division Multiplexing Visible Light Communication
Author:
Affiliation:
1. Institute for Electric Light Sources, School of Information Science and Technology, Yiwu Research Institute, Fudan University, Shanghai, China
2. Jiangxi Latticepower Semiconductor Corporation, Nanchang, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Science and Technology Commission of Shanghai Municipality
Leading-Edge Technology Program of Jiangsu Natural Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/50/10196303/10081349.pdf?arnumber=10081349
Reference63 articles.
1. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
2. High bandwidth series-biased green micro-LED array toward 6 Gbps visible light communication
3. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
4. High-Bandwidth Green Semipolar (20–21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication
5. Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
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