SiGe BiCMOS Current Status and Future Trends in Europe-Reference-Cited by-同舟云学术

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SiGe BiCMOS Current Status and Future Trends in Europe

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Chevalier Pascal,Liebl Wolfgang,Rucker Holger,Gauthier Alexis,Manger Dirk,Heinemann Bernd,Avenier Gregory,Bock Josef

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8536738/8550831/08550963.pdf?arnumber=8550963

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. Ultra-Wideband Transceiver MMIC Tuneable From 74.1 GHz to 147.8 GHz in SiGe Technology;IEEE Journal of Microwaves;2024-07

3. A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation;IEEE Microwave and Wireless Technology Letters;2024-06

5. Front-End Design in SiGe BiCMOS Technology for V-band High Resolution Imaging;2024 IEEE International Workshop on Metrology for Industry 4.0 & IoT (MetroInd4.0 & IoT);2024-05-29

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