Fabrication of One-Transistor-Capacitor Structure of Nonvolatile TFT Ferroelectric RAM Devices Using Ba(Zr 0.1Ti 0.9)O 3 Gated Oxide Film
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Published:2007-09
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ISSN:0885-3010
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Container-title:IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
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