Fabrication and characterization of ZnO/Al<sub>2</sub>O<sub>3</sub> thin film transistors: channel length effect study-Reference-Cited by-同舟云学术

Fabrication and characterization of ZnO/Al₂O₃ thin film transistors: channel length effect study

Published:2022-05-06 Issue: Volume: Page:
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Container-title:2022 19th International Multi-Conference on Systems, Signals & Devices (SSD)
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Author:

Filali Walid¹,Lekoui Fouaz²,Zatout Boumediene³,Henni Laid²,Abdelmoumene Sidali²,Garoudja Elyes¹,Amrani Rachid⁴,Oussalah Slimane³

Affiliation:

1. Centre de Développement des Technologies Avancées,Plateforme Technologique de Microfabrication,Baba Hassen,Algiers,Algeria,16081

2. Centre de Développement des Technologies Avancées,Division Milieux Ionisés et Laser,Baba Hassen,Algiers,Algeria,16081

3. Centre de Développement des Technologies Avancées,Division Microélectronique et Nanotechnologies,Baba Hassen,Algiers,Algeria,16081

4. Université Benyoucef Benkhedda Alger 1,Département des Sciences de la Matière,Algiers,Algeria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955493/9955494/09955954.pdf?arnumber=9955954

Reference18 articles.

1. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

2. Investigation of the effects of thermal annealing on the structural, morphological and optical properties of nanostructured Mn doped ZnO thin films

3. A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

4. High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals 2021, 11, 262;wang;ed s Note MDPI stays neutral with regard to jurisdictional claims in published…,2021

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