M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability-Reference-Cited by-同舟云学术

M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

Published:2022-04 Issue:4 Volume:43 Page:541-544
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sun Xinyu¹,Wang Zhengpeng¹^ORCID,Gong Hehe¹^ORCID,Chen Xuanhu¹^ORCID,Zhang Yijun¹,Wang Zhiyuan¹^ORCID,Yu Xinxin¹^ORCID,Ren Fangfang¹,Lu Hai¹^ORCID,Gu Shulin¹,Zheng Youdou¹,Zhang Rong¹,Ye Jiandong¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

Funder

Key-Area Research and Development Program of Guangdong Province

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09726226.pdf?arnumber=9726226

Reference39 articles.

1. Integrated Flexible Ga 2 O 3 Deep UV Photodetectors Powered by Environmental Electromagnetic Radiation Energy

2. Room-Temperature Fabricated Amorphous Ga2 O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

3. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

4. High responsivity in molecular beam epitaxy grown $\alpha$ -Ga2O3 metal semiconductor metal solar blind deep-UV photodetector;pratiyush;Appl Phys Lett,2017

5. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

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